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Experience Next-Generation GaNFast Technology

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Sep
14
SEMICON Taiwan
Navitas to highlight performance and environmental benefits of next-gen GaN power ICs in fast charge...
Sep
5
EPE 2022 ECCE Conference
GaNFast™ power ICs, use next-generation gallium nitride (GaN) to integrate power, drive, and contr...

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SEMICON Taiwan

September 14 - September 16

Navitas to highlight performance and environmental benefits of next-gen GaN power ICs in fast chargers, EV, solar and data center markets.

GaN is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon and enables up to 3x more power and 3x faster charging, with up to 40% energy savings in half the size and weight of legacy silicon solutions. Navitas’ GaNFast™ power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast and efficient performance. With over 145 patents issued or pending, and significant trade secrets including a proprietary process design kit (PDK), Navitas believes it has a multi-year lead in next-generation GaN power ICs.

Details

Start:
September 14
End:
September 16
Website:
https://www.semicontaiwan.org/en

Venue

Nangang Exhibition Center
No. 1, Jingmao 2nd Rd, Nangang District, Taipei City, Taiwan 115
Taipei City, Taiwan
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